Titel
Accueil
Navigation principale
Contenu
Recherche
Aide
Fonte
Standard
Gras
Identifiant
Interrompre la session?
Une session sous le nom de
InternetUser
est en cours.
Souhaitez-vous vraiment vous déconnecter?
Interrompre la session?
Une session sous le nom de
InternetUser
est en cours.
Souhaitez-vous vraiment vous déconnecter?
Accueil
Plus de données
Partenaires
Aide
Mentions légales
D
F
E
La recherche est en cours.
Interrompre la recherche
Recherche de projets
Projet actuel
Projets récents
Graphiques
Identifiant
Titel
Titel
Unité de recherche
INNOSUISSE
Numéro de projet
10708.1;8 PFNM-NM
Titre du projet
Nitride Based Green Superluminescent Light Emitting Diodes
Titre du projet anglais
Nitride Based Green Superluminescent Light Emitting Diodes
Données de base
Textes
Participants
Titel
Textes relatifs à ce projet
Allemand
Français
Italien
Anglais
Description succincte
-
-
Résumé des résultats (Abstract)
-
-
Textes saisis
Catégorie
Texte
Description succincte
(Anglais)
Nitride Based Green Superluminescent Light Emitting Diodes
Description succincte
(Français)
Nitride Based Green Superluminescent Light Emitting Diodes
Résumé des résultats (Abstract)
(Anglais)
Superluminescent Light Emitting Diodes (SLEDs) are semiconductor electrically injected devices that emit broadband light in the form of a collimated beam. In this sense, SLEDs can be understood as broadband laser diodes with a beam-like output. The most prominent applications of these devices which typically emit in the near infrared are optical coherence thomography (OCT), fiber-optic test equipment (FOT) and fiber optic gyroscopes (FOG). Beside the traditional markets, new ones are expected to emerge in the next few years due to the extension of the light emission towards the visible spectral region. In particular lighting and projection applications would benefit of the existence of visible-light SLEDs. The material of choice to realize optoelectronic devices emitting in the visible is gallium nitride (GaN) and its indium containing (InGaN) and alluminum containing (AlGaN) alloys. This project is aimed at the development of SLEDs based on the GaN material system and emitting in the green spectral region. These SLEDs will complement the existing red (already in production) and blue (prototypes developed) emitting devices, thus opening the way to a series of new and appealing Red-Green-Blue applications.
Résumé des résultats (Abstract)
(Français)
Superluminescent Light Emitting Diodes (SLEDs) are semiconductor electrically injected devices that emit broadband light in the form of a collimated beam. In this sense, SLEDs can be understood as broadband laser diodes with a beam-like output. The most prominent applications of these devices which typically emit in the near infrared are optical coherence thomography (OCT), fiber-optic test equipment (FOT) and fiber optic gyroscopes (FOG). Beside the traditional markets, new ones are expected to emerge in the next few years due to the extension of the light emission towards the visible spectral region. In particular lighting and projection applications would benefit of the existence of visible-light SLEDs. The material of choice to realize optoelectronic devices emitting in the visible is gallium nitride (GaN) and its indium containing (InGaN) and alluminum containing (AlGaN) alloys. This project is aimed at the development of SLEDs based on the GaN material system and emitting in the green spectral region. These SLEDs will complement the existing red (already in production) and blue (prototypes developed) emitting devices, thus opening the way to a series of new and appealing Red-Green-Blue applications.
SEFRI
- Einsteinstrasse 2 - 3003 Berne -
Mentions légales