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Forschungsstelle
INNOSUISSE
Projektnummer
10708.1;8 PFNM-NM
Projekttitel
Nitride Based Green Superluminescent Light Emitting Diodes
Projekttitel Englisch
Nitride Based Green Superluminescent Light Emitting Diodes

Texte zu diesem Projekt

 DeutschFranzösischItalienischEnglisch
Kurzbeschreibung
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Abstract
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Erfasste Texte


KategorieText
Kurzbeschreibung
(Englisch)
Nitride Based Green Superluminescent Light Emitting Diodes
Kurzbeschreibung
(Französisch)
Nitride Based Green Superluminescent Light Emitting Diodes
Abstract
(Englisch)
Superluminescent Light Emitting Diodes (SLEDs) are semiconductor electrically injected devices that emit broadband light in the form of a collimated beam. In this sense, SLEDs can be understood as broadband laser diodes with a beam-like output. The most prominent applications of these devices which typically emit in the near infrared are optical coherence thomography (OCT), fiber-optic test equipment (FOT) and fiber optic gyroscopes (FOG). Beside the traditional markets, new ones are expected to emerge in the next few years due to the extension of the light emission towards the visible spectral region. In particular lighting and projection applications would benefit of the existence of visible-light SLEDs. The material of choice to realize optoelectronic devices emitting in the visible is gallium nitride (GaN) and its indium containing (InGaN) and alluminum containing (AlGaN) alloys. This project is aimed at the development of SLEDs based on the GaN material system and emitting in the green spectral region. These SLEDs will complement the existing red (already in production) and blue (prototypes developed) emitting devices, thus opening the way to a series of new and appealing Red-Green-Blue applications.
Abstract
(Französisch)
Superluminescent Light Emitting Diodes (SLEDs) are semiconductor electrically injected devices that emit broadband light in the form of a collimated beam. In this sense, SLEDs can be understood as broadband laser diodes with a beam-like output. The most prominent applications of these devices which typically emit in the near infrared are optical coherence thomography (OCT), fiber-optic test equipment (FOT) and fiber optic gyroscopes (FOG). Beside the traditional markets, new ones are expected to emerge in the next few years due to the extension of the light emission towards the visible spectral region. In particular lighting and projection applications would benefit of the existence of visible-light SLEDs. The material of choice to realize optoelectronic devices emitting in the visible is gallium nitride (GaN) and its indium containing (InGaN) and alluminum containing (AlGaN) alloys. This project is aimed at the development of SLEDs based on the GaN material system and emitting in the green spectral region. These SLEDs will complement the existing red (already in production) and blue (prototypes developed) emitting devices, thus opening the way to a series of new and appealing Red-Green-Blue applications.