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Forschungsstelle
INNOSUISSE
Projektnummer
7925.1;10 NMPP-NM
Projekttitel
New materials for thin-film Bulk Acoustic Wave (BAW) devices
Projekttitel Englisch
New materials for thin-film Bulk Accoustic Wave (BAW) devices

Texte zu diesem Projekt

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Kurzbeschreibung
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Abstract
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Erfasste Texte


KategorieText
Kurzbeschreibung
(Englisch)
New materials for thin-film Bulk Acoustic Wave (BAW) devices
Abstract
(Englisch)
AlN is the material of choice for industrial fabrication of BAW devices, with robust and reproducible PVD deposition solutions now on the market. However, the need for another piezoelectric material exhibiting larger coupling coefficient is already emerging in the industry in order to address wider bandwidth filtering requirements of future wireless applications. It is believed that PZT (PbZrxTi1-xO3) is one of the best material candidate in order to fulfill the requirements of high electromechanical coupling and acoustic quality factor as well as compatibility with volume manufacturing using available system platforms. The objective of the project is to develop the process of PZT PVD sputtering from ceramic target and validate the acoustic properties of the PZT thin-film with bulk acoustic wave resonator and filter vehicles.