Improvement of Dopant Diffusion and Activation Models in Strained Silicon by Ab Initio Simulations on the Atomic Scale (ATOMDIFF)

• Unité de recherche: INNOSUISSE
• Numéro de projet: 8349.1;3 NMPP-NM
• Titre du projet anglais: Improvement of Dopant Diffusion and Activation Models in Strained Silicon by Ab Initio Simulations on the Atomic Scale (ATOMDIFF)

Description succincte (Anglais)

Improvement of Dopant Diffusion and Activation Models in Strained Silicon by Ab Initio Simulations on the Atomic Scale (ATOMDIFF)

Résumé des résultats (Abstract) (Anglais)

The understanding of diffusion and activation processes in the ultra-shallow junction formation of strained silicon devices is essential for the development and optimization of future advanced IC technologies. Accurate and predictive modeling including the relevant physical effects is absolutely essential to meet this challenging task. In order to improve the accuracy of the physical models used in process simulation, ab initio calculations offer are an ideal and cost-effective alternative to experiments. Together with our national and international partners, we propose a novel methodology towards first-principles physical modeling of dopant diffusion and activation processes for future VLSI technology nodes beyond 65 nm.