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Unité de recherche
INNOSUISSE
Numéro de projet
6756.2;8 EPRP-IW
Titre du projet
Diamond reinforced metal matrix composites for heat sink applications
Titre du projet anglais
Diamond reinforced metal matrix composites for heat sink applications

Textes relatifs à ce projet

 AllemandFrançaisItalienAnglais
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Résumé des résultats (Abstract)
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Textes saisis


CatégorieTexte
Description succincte
(Allemand)
Diamond reinforced silver and copper matrix composite materials for heat sink applications
Description succincte
(Anglais)
Diamond reinforced metal matrix composites for heat sink applications
Résumé des résultats (Abstract)
(Anglais)
High energy dissipation rates in semiconductors set stringent conditions on the substrate on which the semiconductor is mounted. Properties required are a high thermal conductivity (>300 W/mK) and a low coefficient of thermal expansion (CTE) of 4-8 ppm/K. While there is no monolithic material with this combination of physical properties, composite materials may fulfil the requirements. Classical composites used in this kind of situation are Al-SiC and Cu-Mo or Cu-W composites. Preliminary research has shown that diamond particles combined with Al-, Ag-, and Cu-based matrices have high potential to improve the performance of these substrates in terms of thermal conductivity by a factor of 3-4 while improving also on the match with the CTE of the semiconductor. This allows running the semiconductor at higher power throughput or at a given power at lower temperature. The goal of this project is to develop a production process for such composites that meets the economic boundary conditions of the high power semiconductor market