Stabiliy of advanced LP-CVD ZnO within encapsulated thin film silicon solar

• Unité de recherche: INNOSUISSE
• Numéro de projet: 7253.2;7 EPRP-IW
• Titre du projet anglais: Stabiliy of advanced LP-CVD ZnO within encapsulated thin film silicon solar

Description succincte (Allemand)

Stabiliy of advanced LP-CVD ZnO within encapsulated thin film silicon solar

Description succincte (Anglais)

Stabiliy of advanced LP-CVD ZnO within encapsulated thin film silicon solar

Résumé des résultats (Abstract) (Allemand)

Zinc oxide (ZnO) deposited by Low-Pressure Chemical Vapor Deposition (LP-CVD) has already proven to be a very efficient candidate as transparent electrode to contact thin-film silicon solar cells developed in laboratory.The goal of this project is to study and improve if necessary the overall stability of LP-CVD ZnO layers, as incorporated within encapsulated thin-films silicon solar cells. This work is done in order to validate a complete commercial concept of Photovoltaic (PV) thin-film silicon solar cells.