Stabiliy of advanced LP-CVD ZnO within encapsulated thin film silicon solar

• Forschungsstelle: INNOSUISSE
• Projektnummer: 7253.2;7 EPRP-IW
• Projekttitel Englisch: Stabiliy of advanced LP-CVD ZnO within encapsulated thin film silicon solar

Kurzbeschreibung (Deutsch)

Stabiliy of advanced LP-CVD ZnO within encapsulated thin film silicon solar

Kurzbeschreibung (Englisch)

Stabiliy of advanced LP-CVD ZnO within encapsulated thin film silicon solar

Abstract (Deutsch)

Zinc oxide (ZnO) deposited by Low-Pressure Chemical Vapor Deposition (LP-CVD) has already proven to be a very efficient candidate as transparent electrode to contact thin-film silicon solar cells developed in laboratory.The goal of this project is to study and improve if necessary the overall stability of LP-CVD ZnO layers, as incorporated within encapsulated thin-films silicon solar cells. This work is done in order to validate a complete commercial concept of Photovoltaic (PV) thin-film silicon solar cells.