SHINE: Silicon heterostructure intersubband emitters

• Unité de recherche: PCRD EU
• Numéro de projet: 02.0226-1
• Titre du projet anglais: SHINE: Silicon heterostructure intersubband emitters

Mots-clé (Anglais)

Forecasting; Information Processing; Information Systems; Innovation; Technology Transfer

Autre Numéro de projet (Anglais)

EU project number: IST-2001-38035

Programme de recherche (Anglais)

EU-programme: 5. Frame Research Programme - 1.2.8 Generic R&D activities

Description succincte (Anglais)

See abstract

Autres indications (Anglais)

Full name of research-institution/enterprise:
Paul Scherrer Institut PSI
Labor für Mikro- und Nanotechnologie

Résumé des résultats (Abstract) (Anglais)

It is the aim of the proposal to investigate and demonstrate an infrared Si/SiGe quantum cascade laser. While the indirect bandgap of silicon prohibits efficient recombination of electrons and holes, inter subb and electroluminescence has been demonstrated by Si/SiGe cascade structures. Theoretical modelling will be used to design parallel and perpendicular injection structures aimed at producing light amplification / gain. Laser cavities and waveguides will also be investigated before being combined with again medium to demonstrate a laser.

Objectives:
The main objective of the project is to demonstrate an infrared Si/SiGe quantum cascade laser. Epitaxially grown Si/SiGe heterostructures will be fabricated into devices for infrared spectroscopic investigations and to facilitate measurements using the free electron laser. This will allow determination of the energy spacing and subband lifetimes in the quantum wells. Parallel and perpendicular injection mechanisms will be studied with a number of different schemes for light amplification / gain including negative effective mass and LO phonon resonant depopulation. Laser cavities and waveguides will be designed and tested. At all stages theoretical modelling will strongly interact with experimental results to allow efficient design of appropriate devices. Finally an infrared Si/SiGe quantum cascade laser will be designed, grown, fabricated and characterised.

Work description:
WP1 Parallel transport structures using both light hole (LH) to heavy hole (HH) and HH to HH transitions with negative effective mass and resonant LO phonon depopulation: modelling and design; material growth; material characterisation; fabrication of device; determination of best injection mechanism; gain determination through electroluminescence, absorption and intersubband lifetime measurements; modelling validation and calibration;
WP2 Perpendicular injection structures using both light hole (LH) to heavy hole (HH) and HH to HH transitions with negative effective mass and resonant LO phonon depopulation: modelling and design; material growth; material characterisation; fabrication of device; determination of best injection mechanism; gain determination through electroluminescence, absorption and intersubb and lifetime measurements; modelling validation and calibration;
WP3 Laser cavity and waveguide design and fabrication: design using optical and electrical confinement; material growth, processing and fabrication; measurement of gain and losses;
WP4 Demonstration of an infrared Si/SiGe quantum cascade laser: modelling and design; material growth; material characterisation; fabrication; injection mechanism tests; electroluminescence measurements in addition to full device characterisation.

Références bases de données (Anglais)

Swiss Database: Euro-DB of the
State Secretariat for Education and Research
Hallwylstrasse 4
CH-3003 Berne, Switzerland
Tel. [phone]
Swiss Project-Number: 02.0226-1