SPINTRONICS: Spin-Dependent Transport in Nanostructures

• Unité de recherche: PCRD EU
• Numéro de projet: 02.0219-2
• Titre du projet anglais: SPINTRONICS: Spin-Dependent Transport in Nanostructures

Mots-clé (Anglais)

Education; Training; Scientific Research; Social Aspects

Autre Numéro de projet (Anglais)

EU project number: HPRN-CT-2002-00302

Programme de recherche (Anglais)

EU-programme: 5. Frame Research Programme - 4.1.1 Research training networks

Description succincte (Anglais)

See abstract

Résumé des résultats (Abstract) (Anglais)

The joint programme of work involves four main objectives, each of which will be pursued by a combination of experiment and theory:
Objective 1. Spin Injection into Semiconductors The goal is to achieve electrical injection of spin-polarized currents into semiconductors, which is an essential ingredient for any emerging spintronics technology. Two main types of spin injectors will be explored: (a) dilute magnetic semiconductors; (b ) metallic ferromagnets with high-impedance junctions.
Objective 2. Spin-Dependent Transport through Hybrid Structures Spin-dependent transport in hybrid structures involving a combination of ferromagnetic (F) and normal (N) or superconducting (S) materials will be studied systematically. A general quasi classical theory for such hybridsystems will be developed. For FN structures, the technologically vital question of which factors effect the spin-flip length in the metal will be studied systematically. For FS structures, novel effects arising from the interplay between spin coherence and electron-hoIe coherence will be explored.
Objective 3: Spin-Dependent Transport in Confined GeometriesSpin-dependent transport in a variety of confined geometries will be studied in detail, both to explore their fundamental properties and with a view to possible applications. Particularly, we shall study (a) quantum dots [Kondo effect, spin coherence times, dots as qubits for quantum computation]; (b ) quantum wires [ballistic and diffusive spin transport, spin-charge separation]; ( c ) quantum point contacts[conductance quantization, spin-valve magnetoresistance]; (d) magnetic single-electron transistors [tunnelling magnetoresistance, spinaccumulation]; (e) magnetic multilayers [spin-valve effect]; (f) Spin supercurrents in thin ferromagnetic films.
Objective 4: Mesoscopic Magnetism We shall develop microscopic models for small magnets on the nanometer scale, and study spin-dependent transport through magnetic nanograins so small that their energy spectrum is discrete.

Références bases de données (Anglais)

Swiss Database: Euro-DB of the
State Secretariat for Education and Research
Hallwylstrasse 4
CH-3003 Berne, Switzerland
Tel. [phone]
Swiss Project-Number: 02.0219-2