Reliability and degradation physics of ultra-thin dielectries 'Nanoxide'

• Unité de recherche: INNOSUISSE
• Numéro de projet: 6499.1;8 TNS-NM
• Titre du projet anglais: Reliability and degradation physics of ultra-thin dielectries 'Nanoxide'

Mots-clé (Allemand)

1. Reliability analysis 6. Failure analysis 2. Physics of failure 7. quantum mechanical modelling 3. Failure mechanism of nanometer thick layers 8. 4. Nano-materials 9. 5. Nano-devices 10.

Description succincte (Allemand)

Reliability and degradation physics of ultra-thin dielectries 'Nanoxide'

Description succincte (Anglais)

Reliability and degradation physics of ultra-thin dielectries 'Nanoxide'

Résumé des résultats (Abstract) (Allemand)

The subject of the project is the development of reliability models for dielectric layers below 5 nm thickness on a physical basis. Current CMOS technology uses layers as thin as about 3 nm, and existing reliability models are empirical.