Reliability and degradation physics of ultra-thin dielectries 'Nanoxide'

• Forschungsstelle: INNOSUISSE
• Projektnummer: 6499.1;8 TNS-NM
• Projekttitel Englisch: Reliability and degradation physics of ultra-thin dielectries 'Nanoxide'

Schlüsselwörter (Deutsch)

1. Reliability analysis 6. Failure analysis 2. Physics of failure 7. quantum mechanical modelling 3. Failure mechanism of nanometer thick layers 8. 4. Nano-materials 9. 5. Nano-devices 10.

Kurzbeschreibung (Deutsch)

Reliability and degradation physics of ultra-thin dielectries 'Nanoxide'

Kurzbeschreibung (Englisch)

Reliability and degradation physics of ultra-thin dielectries 'Nanoxide'

Abstract (Deutsch)

The subject of the project is the development of reliability models for dielectric layers below 5 nm thickness on a physical basis. Current CMOS technology uses layers as thin as about 3 nm, and existing reliability models are empirical.