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Unité de recherche
PCRD EU
Numéro de projet
99.0551
Titre du projet
HERCULAS: High resolution electrical characterization of ulsi and advanced semiconductor devices
Titre du projet anglais
HERCULAS: High resolution electrical characterization of ulsi and advanced semiconductor devices

Textes relatifs à ce projet

 AllemandFrançaisItalienAnglais
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Textes saisis


CatégorieTexte
Mots-clé
(Anglais)
Microelectronics; nanotechnology; extraction of 2D doping profiles; scanning capacitance microscopy; simulation;
Education; Training; Scientific Research; Social Aspects
Autre Numéro de projet
(Anglais)
EU project number: HPRN-CT-00031
Programme de recherche
(Anglais)
EU-programme: 5. Frame Research Programme - 4.1.1 Research training networks
Description succincte
(Anglais)
See abstract
Partenaires et organisations internationales
(Anglais)
Coordinator: Interuniversity Microelectronics Centre (IMEC), Leuven (B)
Résumé des résultats (Abstract)
(Anglais)
Scanning Capacitance Microscopy (SCM) is a scanning probe technique to provide two dimensional dopant profiles of semiconductors. The spatial resolution capabilities of the different operating modes of the SCM applied to unipolar samples have been investigated extensively in the past and suitable quantification tools have been developed (e.g. ScaMsim). Since the electric field generated by the tip strongly distorts the carriers distribution within bipolar samples, a very accurate simulation of the system both in depletion and in accumulation has been performed to provide a correct interpretation of the response of the SCM detector. The theoretical investigations and the physical simulations have been validated by epitaxial PN-samples with very low dopant concentrations to clearly separate the contributions due to the different effects. Diamond-coated cantilevers have been used for SCM as an alternative for metal-coated cantilevers in order to improve the stability of probes. It has been shown that the diamond-coated probes produce an adequate intensity of the dC signal and high contrast for both p- and n-type silicon samples and also provide superior endurance characteristics to metal-coated probes. Dry oxidation by UV exposure at high temperatures has been compared with the wet oxidation process by immersion in hydrogen peroxide. The dry oxidation exhibits better reproducibility, while the wet oxidation shows better homogeneity. The comparison of SCM data with SIMS measurements has demonstrated that diamond-coated probes can be used at least for 1D quantitative measurements. These activities lead to the publication of four papers either at international conferences or in peer-reviewed journals.
Références bases de données
(Anglais)
Swiss Database: Euro-DB of the
State Secretariat for Education and Research
Hallwylstrasse 4
CH-3003 Berne, Switzerland
Tel. +41 31 322 74 82
Swiss Project-Number: 99.0551