Local investigation of mesoscopic semiconductor structures with scanning probe techniques at low temperatures and in high magnetic fields

• Research unit: COST
• Project number: C99.0092

Key words (English)

Nanostructures; scanning probe techniques

Research programs (English)

COST-Action P5 - Mesoscopic electronics

Short description (English)

See abstract

Partners and International Organizations (English)

A, B, CZ, DK, FIN, F, D, H, I, NL, PL, SK, E, S, CH, GB

Abstract (English)

Specially fabricated cantilevers attached to commercial tuning forks were developed by Dr. U. Staufer etal (Uni Neuchatel) and characterized by our scanning probe set-up which allows to operate the sensor in a phase -locked-loop with very high frequency resolution (mHz). We took images and did current-voltage spectroscopy at room temperature as well as at liquid He temperatures on graphite surfaces. Electrical contact to the tip of the sensor independent of the electrical excitation was achieved. The current-voltage characteristics can not simply be interpreted based on the tunneling effect and need further refined investigations, which are underway.

References in databases (English)

Swiss Database: COST-DB of the State Secretariat for Education and Research Hallwylstrasse 4 CH-3003 Berne, Switzerland Tel. [phone] Swiss Project-Number: C99.0092