GSQ: Gallium arsenide second-window quantum dot lasers

• Unité de recherche: PCRD EU
• Numéro de projet: 99.0140-2
• Titre du projet anglais: GSQ: Gallium arsenide second-window quantum dot lasers

Mots-clé (Anglais)

1300 nm lasers; telecommunication lasers; quantum dots; self organized growth; molecular beam epitaxy

Autre Numéro de projet (Anglais)

EU project number: IST-1999-10450

Programme de recherche (Anglais)

EU-programme: 5. Frame Research Programme - 1.2.4 Essential technologies and infrastructures

Description succincte (Anglais)

See abstract

Partenaires et organisations internationales (Anglais)

Coordinator:Università di Lecce (I)

Résumé des résultats (Abstract) (Anglais)

The main objective of this project is to demonstrate the feasibility of applying self-assembled GaInAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) on GaAs substrates for the realization of lasers emitting at 1300 nm wavelength. This waveleength corresponds to a region of minimum dispersion and low propagation loss for standard optical fibers, and is of interest for short to medium distance optical links and interconnects. The use of GaAs substrates offers significant cost advantages compared to the conventionnal quantum well 1300 nm quantum well lasers grown on InP substrates. In addition, the larger bandgap of the carrier confining layers should lead to lower threshold currents and a better temperature stability compared to InP-based lasers. Finally, the availability of large index contrast GaAs/AlAs distributed Bragg mirrors should make the quantum dot approach on GaAs substrates also of high interest for the realization of 1300 nm vertical cavity lasers (VCSELs) and VCSEL arrays in this materials system.Specific project goals are .- demonstration of high-performance in-plane 1300 nm Fabry-Pérot QD lasers on GaAs and process industrialization by the industrial partners.- demonstration of room temperature microcavity light emitting diodes (LEDs) and electrically pumped QD VCSELs emitting at 1300 nm- study of the high frequency characteristics of 1300 nm QD lasers for their application in high data rate optical links- comparison with alternate approaches, particularly 1300 nm GaInNAs lasers on GaAs substratesThe contribution of the research group at EPFL centers on the growth by MBE of high areal density QD layers emitting at 1300 nm, the realization of low threshold in plane QD lasers, and the development of 1300 nm QD VCSELs on GaAs. By the end of 2001, the first 2 objectives have been succesfully met. Single mirror LEDs emitting at 1285 nm (ground state transition) with a maximum output power of 200 mW at 300 K have been realized, exhibiting modulation bandwidths in excess of 1 GHz at high bias currents. These resutls indicate that the 1300 nm LEDs may be suitable as low cost sources for short distance optical links.The studies on 1300 nm GaAs-based QD VCSELs are being pursued further in parallel with other alternative approaches.

Références bases de données (Anglais)

Swiss Database: Euro-DB of the
State Secretariat for Education and Research
Hallwylstrasse 4
CH-3003 Berne, Switzerland
Tel. [phone]
Swiss Project-Number: 99.0140-2